Quantitative Analysis of Surface Losses in Coplanar Waveguide Resonators Part 3: Surface Loss Extraction

ORAL

Abstract

Uniquely characterizing TLS defect layers around superconductors is challenging due to the nearly proportional scaling multiple of the defect layer participations in response to changes in geometry and anisotropic trench depth. We design a set of superconducting coplanar waveguide resonators utilizing deep isotropic etching into the silicon substrate to enable the extraction of independent surface losses. We then combine finite element electromagnetic simulations with statistical characterization of these isotropically etched resonators to determine the independent loss contribution from different interfaces for a high-Q TiN superconductor fabrication process. This characterization technique can be used to quantify the impact of process changes on individual defect layer losses and also as a general process monitor of multiple defect layer losses in co-fabricated superconducting qubit circuits.

*This material is based upon work supported by the Department of Defense under Air Force Contract No. FA8721-05-C-0002 and/or FA8702-15-D-0001. Any opinions, findings, conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the Departm

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Presenters

  • Wayne Woods

    • MIT Lincoln Laboratory
    • MIT Lincoln Lab
    • Massachusetts Inst of Tech-MIT

Authors

  • Wayne Woods

    • MIT Lincoln Laboratory
    • MIT Lincoln Lab
    • Massachusetts Inst of Tech-MIT

  • Alexander Melville

    • MIT Lincoln Laboratory
    • MIT Lincoln Lab
    • Massachusetts Inst of Tech-MIT

  • Philip Krantz

    • MIT Lincoln Laboratory
    • MIT Lincoln Lab
    • Massachusetts Inst of Tech-MIT
    • MIT

  • Rabindra Das

    • MIT Lincoln Laboratory
    • MIT Lincoln Lab
    • Massachusetts Inst of Tech-MIT

  • Evan Golden

    • MIT Lincoln Laboratory
    • MIT Lincoln Lab
    • Massachusetts Inst of Tech-MIT

  • Corey Stull

    • MIT Lincoln Laboratory
    • MIT Lincoln Lab
    • Massachusetts Inst of Tech-MIT

  • Vlad Bolkhovsky

    • MIT Lincoln Laboratory
    • MIT Lincoln Lab

  • Danielle Braje

    • MIT Lincoln Laboratory
    • MIT Lincoln Lab

  • David Hover

    • MIT Lincoln Laboratory
    • MIT Lincoln Lab

  • David Kim

    • MIT Lincoln Laboratory
    • MIT Lincoln Lab
    • Lincoln Laboratory, Massachusetts Institute of Technology
    • Massachusetts Inst of Tech-MIT
    • Lincoln Laboratory, Massachusetts Inst of Tech-MIT

  • Xhovalin Miloshi

    • MIT Lincoln Laboratory
    • MIT Lincoln Lab

  • Danna Rosenberg

    • MIT Lincoln Laboratory
    • MIT Lincoln Lab
    • Massachusetts Inst of Tech-MIT
    • Lincoln Laboratory, Massachusetts Inst of Tech-MIT

  • Arjan Sevi

    • MIT Lincoln Laboratory
    • MIT Lincoln Lab

  • Jonilyn Yoder

    • MIT Lincoln Laboratory
    • MIT Lincoln Lab
    • Lincoln Laboratory, Massachusetts Institute of Technology
    • Massachusetts Inst of Tech-MIT
    • Lincoln Laboratory, Massachusetts Inst of Tech-MIT

  • Eric Dauler

    • MIT Lincoln Laboratory
    • MIT Lincoln Lab

  • William Oliver

    • MIT Lincoln Laboratory
    • MIT Lincoln Lab
    • Massachusetts Institute of Technology & MIT Lincoln Laboratory
    • Department of Physics, Research Laboratory of Electronics, Lincoln Laboratory, Massachusetts Institute of Technology
    • Massachusetts Inst of Tech-MIT
    • Department of Physics, Research Laboratory of Electronics, Lincoln Laboratory, Massachusetts Inst of Tech-MIT
    • MIT
    • Lincoln Laboratory, Research Laboratory of Electronics, and Department of Physics, Massachusetts Institute of Technology
    • Department of Physics, Research Laboratory of Electronics, Lincoln Laboratory, Massachusetts institute of Technology