High-Mobility CVD-Grown Graphene Device Fabrication with Perfluoropolymers
ORAL
Abstract
The transfer of graphene grown by chemical vapor deposition (CVD) using amorphous polymers represents a widely implemented method for graphene-based electronic device fabrication. However, the most commonly used polymer, poly(methyl methacrylate) (PMMA), leaves a residue on the graphene that limits the mobility. Here we report a method for graphene transfer and patterning that employs a perfluoropolymer—Hyflon—as a transfer handle and to protect the graphene against contamination from photoresists or other polymers. CVD-grown graphene transferred this way onto LaAlO3/SrTiO3 heterostructures is atomically clean, with high mobility (~30,000 cm2V−1s−1) near the Dirac point at 2 K and clear, quantized Hall and magnetoresistance. Local control of the LaAlO3/SrTiO3 interfacial metal-insulator transition—through the graphene—is preserved with this transfer method. The use of perfluoropolymers, such as Hyflon, with CVD-grown graphene and other 2D materials can readily be implemented with other polymers or photoresists.
*We gratefully acknowledge the support by N00014-16-1-3152 (JL, BD), and N00014-15-1-2847 (JL). The work at University of Wisconsin-Madison was supported by the National Science Foundation under DMREF Grant No. DMR-1629270, AFOSR FA9550-15-1-0334 and AOARD FA2386-15-1-4046.
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Presenters
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Jianan Li
- Univ of Pittsburgh
- University of Pittsburgh
- Department of Physics and Astronomy, University of Pittsburgh