Gating the superconducting transition in gallium doped silicon
ORAL
Abstract
We have fabricated devices with metal gates separated by an oxide layer from a superconducting channel created by heavily gallium-doped silicon and subsequent annealing. These devices are analogues to metal-oxide-semiconductor (MOS) devices but here the gallium doping causes a superconducting transition to be observed just below 7K [1].
We report on the effects different gate voltages have on the superconducting transition. As in traditional MOS devices, the gate should modulate the carrier density in the now superconducting silicon channel, and it has been reported [2] that the presence of this superconducting transition is indeed related to carrier density in the superconducting channel.
[1] R. Skrotzki et. al., Appl. Phys. Lett. 97, 192505 (2010).
[2] V. Heera, et. al., Appl. Phys. Lett. 100, 262602 (2012).
We report on the effects different gate voltages have on the superconducting transition. As in traditional MOS devices, the gate should modulate the carrier density in the now superconducting silicon channel, and it has been reported [2] that the presence of this superconducting transition is indeed related to carrier density in the superconducting channel.
[1] R. Skrotzki et. al., Appl. Phys. Lett. 97, 192505 (2010).
[2] V. Heera, et. al., Appl. Phys. Lett. 100, 262602 (2012).
*This work was supported in part by NSF EAGER Grant No. DMR-1743986. We acknowledge the use of facilities supported by NSF through the UW-Madison MRSEC (DMR-1720415).
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Presenters
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Brandur Thorgrimsson
- Physics, University of Wisconsin-Madison