Direct Imaging of Tilts and Rotations of Ca<sub>2</sub>RuO<sub>4</sub> Octahedra in Thin Films with Epitaxial Strain using ABF-STEM
ORAL
Abstract
Recent studies on thin film Ca2RuO4 grown on LaAlO3, NdAlO3, and NdGaO3 substrates show that tuning epitaxial strain can control the tilt and rotation of the RuO6 octahedra. This leads to change in electronic properties such as the d-band bandwidth, electrical resistivity, and the metal-to-insulator transition temperature. Quantifying the exact structural distortions of RuO6 is therefore crucial in understanding the correlation between structure modification and electronic properties. In this work we use Annular Bright Field imaging (ABF) in Scanning Transmission Electron Microscopy (STEM) to directly locate the atom positions with picometer precision. Average Ru-O-Ru bond angles are mapped layer by layer to characterize the degree of tilt relaxation and decay lengths as we move away from the strained interface. We also compare distortions of the octahedra for different epitaxially strained states.
*This work made use of the Cornell Center for Materials Research Shared Facilities which are supported through the NSF MRSEC program (DMR-1719875). This work is also supported by NSF fellowship (DGE-1650441).
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Presenters
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Celesta Chang
- Department of Physics, Cornell University