Current-Voltage Characteristics of Quasi-1D Monoclinic NbS<sub>3</sub>-V Devices: Signatures of the Charge Density Wave Transistions

ORAL

Abstract

A strong interest in quasi 2D and quasi 1D Van der Waals materials has led to a renewed attention to layered materials with the charge density wave (CDW) effects. The switching between CDW phases can be utilized for electronic applications. This explains the motivations behind the search for new polymorphs of materials with CDW properties near room temperature. We fabricated devices on recently discovered polymorph of niobium trisulfide, NbS3-V. The material has been prepared by the CVT method. The devices were fabricated using the shadow mask on exfoliated NbS3-V. At T=290 K, we observed two orders-of-magnitude reduction in the electrical resistance. The effect was attributed to the CDW phase transition. This conclusion is supported by ab initio calculations of the phonon dispersion, X-ray diffraction and Raman spectroscopy. M. A. Bloodgood et. al., APL - Materials (accepted 2017).

*This work was supported, in part, by the NSF EFRI-1433395: Novel Switching Phenomena in Atomic MX2 Heterostructures for Multifunctional Applications and by UC-National Lab Collaborative Research and Training Program. Ab initio calculations used the Extreme Science and Engineering Discovery Environment (X

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Presenters

  • Adane Geremew

    • Electrical and computer Engineering, Univ of California - Riverside

Authors

  • Adane Geremew

    • Electrical and computer Engineering, Univ of California - Riverside

  • Guanxiong Liu

    • Electrical and computer Engineering, Univ of California - Riverside
    • Electrical and Computer Engineering, University of California, Riverside
    • University of California Riverside

  • Bishwajit Debnath

    • Electrical and computer Engineering, Univ of California - Riverside
    • Electrical and Computer Engineering, University of California, Riverside
    • Department of Electrical and Computer Engineering, University of California, Riverside
    • Department of Electrical and Computer Engineering, Univ of California - Riverside
    • Electrical and Computer Engineering, University of California Riverside

  • Ece Aytan

    • Electrical and computer Engineering, Univ of California - Riverside
    • Department of Electrical and Computer Engineering, University of California, Riverside
    • Electrical and Computer Engineering, University of California, Riverside
    • Material Science and Engineering, University of California Riverside

  • Mathew Bloodgood

    • Chemsitry, University of Georgia
    • Department of Chemistry, University of Georgia

  • Tina Salguero

    • Chemsitry, University of Georgia
    • Department of Chemistry, University of Georgia

  • Roger Lake

    • Electrical and computer Engineering, Univ of California - Riverside
    • Department of Electrical and Computer Engineering, University of California, Riverside
    • University of California, Riverside
    • Univ of California - Riverside
    • Electrical and Computer Engineering, University of California, Riverside
    • University of Califoria Riverside
    • University of California Riverside
    • Department of Electrical and Computer Engineering, Univ of California - Riverside
    • Electrical and Computer Engineering, University of California Riverside

  • Alexander Balandin

    • Electrical and Computer Engineering , University of California
    • Electrical and Computer Engineering, University of California Riverside
    • Electrical and computer Engineering, Univ of California - Riverside
    • Department of Electrical and Computer Engineering/Materials Science and Engineering Program, University of California, Riverside
    • Department of Electrical and Computer Engineering, University of California, Riverside
    • Electrical and Computer Engineering, University of California, Riverside
    • University of California Riverside