Electric-Field-Induced Ferromagnetism <i>via</i> Cluster Percolation in Ion-Gel-Gated La<sub>1-x</sub>Sr<sub>x</sub>CoO<sub>3-δ</sub> Films
ORAL
Abstract
Electrolyte gating techniques have proven remarkably effective in the study of charge density effects in a variety of conductors. The ability to controllably induce surface charge densities > 1014 cm-2 has led to their extensive use in the study of superconductivity, insulator-metal transitions, and magnetism. In this work we apply electrolyte gating to epitaxial films of La1-xSrxCoO3-δ (LSCO), seeking gate-control of ferromagnetism. Our previous work provided direct evidence of oxygen vacancy creation at positive bias, vs. electrostatic hole accumulation at negative bias, using transport as well as in operando X-ray synchrotron and polarized neutron reflectometry (PNR) measurements [1]. Here, we present detailed gate-control over resistivity, magnetoresistance, magnetization, and Curie temperature under hole accumulation, including gate-induced ferromagnetism verified by PNR. These are discussed in terms of recently developed theory for electrolyte-gate-induced percolation [2].
[1] Walter et al., ACS Nano 10, 7799 (2016). Walter et al., Phys. Rev. Mater., under review (2017).
[2] Orth et al., Phys. Rev. Lett. 118, 106801 (2017)
[1] Walter et al., ACS Nano 10, 7799 (2016). Walter et al., Phys. Rev. Mater., under review (2017).
[2] Orth et al., Phys. Rev. Lett. 118, 106801 (2017)
*Work supported by NSF MRSEC under DMR-1420013, and DOE under DE-SC-0016371 and DE-AC05-00OR22725.
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Presenters
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Jeffery Walter
- University of Minnesota
- Chemical Engineering and Materials Science, University of Minnesota