Giant Voltage-Controlled Magnetic Anisotropy in Strained Ir/FeCo/MgO Heterostructures
ORAL
Abstract
Contrary to current-controlled magnetic random access memory devices utilizing spin transfer torque (STT) or spin-orbit torques (SOT), voltage-induced magnetization switching can lead to a new paradigm enabling ultralow-power and high density instant-on nonvolatile magnetoelectric random access memory (MeRAM) devices. Employing ab initio electronic structure calculations we have investigated the effect of epitaxial strain on the voltage-controlled magnetic anisotropy (VCMA) behavior in Ir/FeCo/MgO heterostructures. We find that the magnetic anisotropy energy decreases linearly with electric field where the giant VCMA efficiency is in the range of -1742 to -1,000 fJ/(Vm) in agreement with recent experiments. Furthermore, we predict an electric-field-induced spin-reorientation which depends on epitaxial strain. These findings open interesting prospects for exploiting strain engineering and the appropriate heavy metal cap to harvest higher efficiency VCMA for the next-generation MeRAM devices.
*Supported by NSF ERC-TANMS Grant No. 1160504 and by NSF-PREM Grant No. DMR-1205734.
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Presenters
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Sohee Kwon
- Department of Physics and Astronomy, Cal State Univ - Northridge