Low ferroelectric hysteresis by strain and polarization gradients

POSTER

Abstract

Phase transitions are among the most interesting and ubiquitous phenomena in nature. In materials science, they are responsible for the technological impact of ferromagnets, ferroelectrics, shape-memory alloys or memristors. First order phase transitions are associated to desirably large, nonlinear changes in the order parameters (polarization, magnetization, resistance, etc) and susceptibilities, but at the same time they are often coupled to the presence of hysteresis, which is related to energy losses. Here local inhomogeneous strain and polarization gradients are found in BaTiO3 thin films, connecting a tetragonal to an orthorhombic phase through a bridging monoclinic phase. The associated gradual polarization rotation gives bulk-like values for the coercive field and fully reversible low hysteresis ferroelectric switching. An essentially temperature-independent huge dielectric constant (~4000) is found, together with a rather large d33 of 100 pm/V and the ability to create a strain diode with a five-fold increase of the piezoresponse by asymmetric electrodes. This low hysteresis direction enables energy-efficient electromechanical functionalities and can aid in the search for new ferroelectrics, piezoelectrics and ferromagnets.

Presenters

  • Arnoud Everhardt

    • Materials Science Division, Lawrence Berkeley National Laboratory
    • Lawrence Livermore National Laboratory
    • Zernike Institute for Advanced Materials

Authors

  • Arnoud Everhardt

    • Materials Science Division, Lawrence Berkeley National Laboratory
    • Lawrence Livermore National Laboratory
    • Zernike Institute for Advanced Materials
  • Thibaud Denneulin

    • CEMES-CNRS
  • Anna Grünebohm

    • Faculty of Physics and CENIDE, University of Duisburg-Essen
  • Yu-Tsun Shao

    • Department of Materials Science and Engineering, University of Illinois
    • Materials Science and Engineering, Univ of Illinois - Urbana
  • Sylvia Matzen

    • Center for Nanoscience and Nanotechnology, Université Paris-Sud
    • Univ of Paris - Sud 11 CNRS
  • Petr Ondrejkovič

    • Institute of Physics, Academy of Sciences of the Czech Republic
  • Fedir Borodavka

    • Institute of Physics, Academy of Sciences of the Czech Republic
  • Silang Zhou

    • Zernike Institute for Advanced Materials, University of Groningen
    • Zernike Institute for Advanced Materials
  • Neus Domingo

    • Catalan Institute of Nanoscience and Nanotechnology (ICN2), Universitat Autonoma de Barcelona
    • Catalan Institute of Nanoscience and Nanotechnology (ICN2)
  • Gustau Catalan

    • Catalan Institute of Nanoscience and Nanotechnology (ICN2), Universitat Autonoma de Barcelona
    • Catalan Institute of Nanoscience and Nanotechnology (ICN2) and ICREA
  • Jiri Hlinka

    • Institute of Physics, Academy of Sciences of the Czech Republic
  • Jian-Min Zuo

    • Department of Materials Science and Engineering, University of Illinois
    • Materials Science and Engineering, Univ of Illinois - Urbana
  • Etienne Snoeck

    • CEMES-CNRS
  • Martin Hÿtch

    • CEMES-CNRS
  • Beatriz Noheda

    • Zernike Institute for Advanced Materials, University of Groningen
    • Zernike Institute for Advanced Materials and Groningen Center for Cognitive Systems and Materials (CogniGron), U. Groningen
    • Univ of Groningen