Thermal scanning probe lithography of topological regions in disordered Sb<sub>2</sub>Te<sub>3</sub> thin films

POSTER

Abstract

We demonstrate the use of thermal scanning probe lithography (t-SPL) for writing on the disordered thin (30-40nm) films of Sb2Te3 to define nanoscale regions of low disorder with topological signatures, such as weak antilocalization (WAL) quantum interference correction to classical Drude conductivity. We will discuss the results of non-local transport measurements and chiral effects associated with the edges.

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NSF-DMR-1420634, NSF-CMMI-1626101

Presenters

  • Shihua Zhao

    • City College of New York - CUNY
    • Physics, City College of New York -CUNY
    • City College of New York

Authors

  • Shihua Zhao

    • City College of New York - CUNY
    • Physics, City College of New York -CUNY
    • City College of New York

  • Inna Korzhovska

    • City College of New York - CUNY
    • City College of New York

  • Edoardo Albisetti

    • Advanced Science Research Center - CUNY

  • Elisa Riedo

    • Advanced Science Research Center - CUNY

  • Lia Krusin-Elbaum

    • City College of New York - CUNY
    • Physics, City College of New York -CUNY
    • City College of New York