High-Yield Single-Step Catalytic Growth of Graphene Nanostripes by Plasma Enhanced Chemical Vapor Deposition

ORAL

Abstract

We report a single-step growth process of graphene nanostripes (GNSPs) by adding certain substituted aromatics as precursors during the PECVD. Without any active heating and by using low plasma power (≤ 60 W), we are able to grow GNSPs vertically with high yields up to (13 ± 4) g/m2 in 20 minutes. The morphology, electronic properties, width and yields of the GNSPs can be controlled by the growth parameters (e.g., the species of seeding molecules, compositions and flow rates of the gases, plasma power, and the growth time). Studies of the Raman spectra, SEM and TEM images, EDX, and electrical conductivity of these GNSPs as functions of the growth parameters confirm high-quality GNSPs with electrical mobility ~ 104 cm2/V-s. Together with the residual gas analyzer spectra and optical emission spectroscopy taken during PECVD growth, we propose a growth and branching mechanism of GNSPs. Our findings open up a pathway to inexpensive mass production of high-quality GNSPs for large-scale applications such as in supercapacitors and lithium-ion batteries.

*This work at Caltech was supported by the Grubstake Award, and that at Rice University was sponsored by the Air Force Office of Scientific Research. W.-S. Tseng acknowledges partial support from the Dragon Gate Program in Taiwan.

Presenters

  • Chen-Chih Hsu

    • Physics, Caltech

Authors

  • Chen-Chih Hsu

    • Physics, Caltech
  • Jacob Bagley

    • Chemistry, Caltech
  • Marcus Teague

    • Physics, Caltech
    • Physics, Califonia Institude of Technology
  • Wei-Shiuan Tseng

    • Physics, Caltech
    • Caltech
  • James Tour

    • Chemistry, Rice University
  • Nai-Chang Yeh

    • Physics, Caltech
    • Physics, Califonia Institude of Technology
    • Caltech