Volatile 2D electron gas in ultra thin BaTiO<sub>3</sub> films
ORAL
Abstract
We investigate the metallic surface state in ultra-thin films of c-axis oriented BaTiO3 by angle resolved photoemission spectroscopy (ARPES). We find Fermi surface contours derived from the Ti 3d t2g conduction band, with broad spectral features due to enhanced quasi-particle scattering. Oxygen vacancies created in the X-ray beam spot allow for reversible in situ doping control. Up to carrier densities as high as 2 × 1021 cm−3, they retain a charge state of 2+, preventing the formation of localized defect states and charge carrier trapping. Sub-surface oxygen vacancy migration at T > 285 K quenches the surface state. Our findings challenge the implementation of non-volatile room temperature applications based on non-stoichiometric BaTiO3.
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Presenters
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Simon Moser
- Lawrence Berkeley Natl Lab
- Lawrence Berkeley National Laboratory
- Advanced Light Source, Lawrence Berkeley National Laboratory