A superconducting contact to a quantum dot can induce electron-hole correlations known as Andreev bound states (ABSs) inside the dot. We study transport through ABSs in InSb nanowires with superconducting contacts as both source and drain. Anomalous transport resonances are observed in these systems, namely one or more (up to 4) replicas of Andreev spectra at higher source-drain biases, as well as negative differential conductance shadows of the resonances inside the induced gap. We develop a model that captures these features by considering the effect of a soft-gap superconducting probe, and of additional ABSs induced in the dot, and in the nanowire segments adjacent to the dot. Our findings extend the framework for the interpretation of tunneling experiments in mesoscopic systems, and specifically of Majorana bound states which are studied with semiconductor nanowire probes similar to those used here.
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Presenters
Azarin Zarassi
University of Pittsburgh
Authors
Azarin Zarassi
University of Pittsburgh
Zhaoen Su
University of Pittsburgh
Jen-Feng Hsu
Univ of Pittsburgh
University of Pittsburgh
Physics, University of Pittsburgh
Pablo San-Jose
Materials Science Factory, ICMM, CSIC
Materials Science Factory, ICMM, CSIC - Madrid
Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM), CSIC
Elsa Prada
IFIMAC and Universidad Autonoma de Madrid, UAM
Universidad Autonoma de Madrid
Ramon Aguado
Materials Science Factory, ICMM, CSIC
Materials Science Factory, ICMM, CSIC - Madrid
Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM), CSIC
Eduardo Jian Hua Lee
Universidad Autonoma de Madrid
Diana Car
Eindhoven Univ of Tech
Department of Applied Physics, Eindhoven University of Technology
Eindhoven University of Technology
Sasa Gazibegovic
Department of Applied Physics, Eindhoven University of Technology
Eindhoven Univ of Tech
Eindhoven University of Technology
Roy Op het Veld
Eindhoven Univ of Tech
Department of Applied Physics, Eindhoven University of Technology
Eindhoven University of Technology
Sébastien Plissard
LAAS, CNRS, Université de Toulouse
LAAS CNRS
John Logan
University of California Santa Barbara
Materials Department, University of California
University of California-Santa Barbara
University of California - Santa Barbara
Mihir Pendharkar
University of California Santa Barbara
Department of Electrical and Computer Engineering, University of California, Santa Barbara
University of California - Santa Barbara
Univ of California - Santa Barbara
Dan Pennachio
University of California - Santa Barbara
Joon Sue Lee
University of California Santa Barbara
California NanoSystems Institute, University of California, Santa Barbara
University of California - Santa Barbara
Materials Science, University of California - Santa Barbara
Univ of California - Santa Barbara
Moira Hocevar
Institut Néel CNRS
Chris Palmstrom
University of California Santa Barbara
Materials Department, California NanoSystems Institute, Electrical and Computer Engineering, University of California
University of California-Santa Barbara
California Nanosystems Institute, Dept. of Electrical and Computer Engineering, and Dept. of Materials, Univ of California - Santa Barbara
University of California - Santa Barbara
Electronics & Computer Enginneering, University of California Santa Barbara
Materials Department, University of California, Santa Barbara
Materials, University of California Santa Barbara
Univ of California - Santa Barbara
Erik P. A. M. Bakkers
Department of Applied Physics, Eindhoven University of Technology
