A Numerical Study of a Disorder-driven 2D Mott Insulator-to-Metal Quantum Phase Transition
ORAL
Abstract
Recent measurements on Sr3(Ir1-xRux)2O7, whose parent compound is a Mott insulator, show that the material undergoes a transition from an antiferromagnetic insulator to an antiferromagnetic metallic phase at sufficiently low temperatures with increasing x. There is experimental evidence that Ru substitution does not dope the system but is only a source of disorder. To model the theoretical nature of disorder generated by the Ru sites, we have studied computationally a two-dimensional Hubbard model in the presence of on-site disorder potentials of a given strength located on a fraction of randomly chosen sites. Using self-consistent mean field calculations, we show that the density of states evolves toward a V-shaped pseudogap at the Fermi energy, in remarkable agreement with experiments. We will also discuss the nature of the local density of states in the different regions of the disordered Mott insulator.
*V.M. acknowledges funding from NSF Award No. DMR-1610143 for the STM studies. The theoretical collaboration was supported by DMREF 1629382 and NSF-DMR- 1309461.
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Presenters
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Jared O'Neal
- Mathematics Department , The Ohio State University and Mathematics & Computer Science Division, Argonne National Laboratory