Tuning a Circular p-n Junction in Graphene from Quantum Confinement to Optical Guiding
POSTER
Abstract
The photon-like propagation of the Dirac-electrons in graphene together with the record-high electronic mobility can lead to applications based on ultra-fast electronic response and low dissipation. But the chiral nature of the charge-carriers which is responsible for the high mobility also makes it difficult to control their motion and prevents electronic switching. Here we show how to manipulate the charge-carriers by using a circular p-n junction whose size can be continuously tuned from the nanometer to the micrometer scale. The junction size is controlled with a dual-gate device consisting of a planar back-gate and a point-like top-gate made by decorating an STM tip with an Au nanowire. The nanometer-scale junction is defined by a deep potential well created by the tip-induced charge. It traps the Dirac-electrons in quantum-confined states which are the graphene equivalent of the atomic collapse states predicted to occur at super-critically charged nuclei. As the junction size increases, the transition to the optical regime is signaled by the emergence of whispering-gallery modes1.
1Y. Jiang, et al, Nature Nanotechnology (2017) doi:10.1038/nnano.2017.181
*DOE-FG02-99ER45742, NSF-DMR 1708158, ESF-EUROCORES- EuroGRAPHENE, FWO-VI and Methusalem program of the Flemish government
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Presenters
Yuhang Jiang
Department of Physics and Astronomy, Rutgers University
Physics, Rutgers
Authors
Yuhang Jiang
Department of Physics and Astronomy, Rutgers University
Physics, Rutgers
Jinhao Mao
Department of Physics and Astronomy, Rutgers University
Dean Moldovan
Departement Fysica, Universiteit Antwerpen
Massoud Ramezani Masir
Department of Physics, University of Texas at Austin
Physics, University of Texas at Austin
Guohong Li
Department of Physics and Astronomy, Rutgers University
Physics and Astronomy, Rutgers Univ
Physics and Astronomy, Rutgers University
Kenji Watanabe
National Institute for Materials Science
NIMS
National Institute for Material Science
Advanced Materials Laboratory, National Institute for Materials Science
National Institute of Materials Science
Research Center for Functional Materials, National Institute for Materials Science
National Institute for Materials Science (NIMS
Advanced Materials Laboratory, NIMS
National Institute for Materials Science, Advanced Materials Laboratory
National Institue for Materials Science
National Institute of Material Science
National Institute for Matericals Science
Advanced Materials Laboratory
National Institute for Materials Science, 1-1 Namiki
Advanced materials laboratory, National institute for Materials Science
NIMS-Japan
Takashi Taniguchi
National Institute for Materials Science
NIMS
National Institute for Material Science
Advanced Materials Laboratory, National Institute for Materials Science
National Institute of Materials Science
Research Center for Functional Materials, National Institute for Materials Science
National Institute for Materials Science (NIMS
Advanced Materials Laboratory, NIMS
National Institute for Materials Science, Advanced Materials Laboratory
National Institue for Materials Science
National Institute of Material Science
National Institute for Matericals Science
Advanced Materials Laboratory
National Institute for Materials Science, 1-1 Namiki
NIMS-Japan
François Peeters
Departement Fysica, Universiteit Antwerpen
Department of Physics, University of Antwerp
University of Antwerp
Eva Andrei
Department of Physics and Astronomy, Rutgers University
Physics and Astronomy, Rutgers Univ
Physics and Astronomy, Rutgers University
Department of Physics and Astronomy, Rutgers the State Univ of NJ New Brunswick