Induced Robust Topological Order on an Ordinary Insulator Heterostructured with a Strong Topological Insulator
ORAL
Abstract
Three of V(Bi, Sb)-VI(Se, Te) binary compounds are predicted and confirmed to be strong topological insulators (STIs). The exception for Sb2Se3 to be an ordinary insulator (OI) is due to the weaker spin-orbit coupling. Here, we report that the rhombohedral phase of Sb2Se3 is successfully grown by molecular beam epitaxy on films of Bi2Se3 (an STI) and In2Se3 (an OI). Surface electronic structures of these heterostructures are investigated by angle-resolved photoemission spectroscopy. In the OI/STI heterostructure, a Dirac cone topological surface state (TSS) is found to be induced on the Sb2Se3 layer up to 15 nm thick, in sharp contrast with the OI/OI heterostructure where no sign of TSS can be observed.
*The work described in this paper was supported in parts from a grant of the SRFDP and RGC ERG Joint Research Scheme of Hong Kong Research Grant Council (RGC) and the Ministry of Education of China (No. M-HKU709/12) and from a Collaborative Research Fund (HKU9/CRF/13G) sponsored by the RGC of Hong Kong Sp
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Presenters
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Bin LI
- Southern University of Science and Technology
- The University of Hong Kong