Large positive linear magnetoresistance in the two-dimensional <i>t<sub>2g</sub></i> electron gas at the EuO/SrTiO<sub>3</sub> interface
ORAL
Abstract
The development of novel nano-oxide spintronic devices would benefit greatly from interfacing with emergent phenomena at oxide interfaces. In this paper, we integrate highly spin-split ferromagnetic semiconductor EuO onto perovskite SrTiO3 (001). A careful deposition of Eu metal by molecular beam epitaxy results in EuO growth via oxygen out-diffusion from SrTiO3. This in turn leaves behind a highly conductive interfacial layer through generation of oxygen vacancies. Below the Curie temperature of 70 K of EuO this spin-polarized two-dimensional t2g electron gas at the EuO/SrTiO3 interface displays very large positive linear magnetoresistance (MR). Soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) shows the t2g nature of the carriers. First principles calculations strongly suggest the Zeeman splitting, caused by proximity magnetism of oxygen vacancies in SrTiO3, is responsible for the MR. This system offers an as-yet-unexplored route to pursue proximity-induced effects in the oxide two-dimensional t2g electron gas.
*Air Force Office of Scientific Research (FA9550-12-10494)
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Presenters
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Alexander Demkov
- Univ of Texas, Austin
- Physics, Univ of Texas, Austin
- Physics, University of Texas at Austin
- Physics, UT-Austin