Hole carrier density and mobility of aluminum delta-doped layers in silicon

ORAL

Abstract

We have measured the hole carrier density and mobility of a two-dimensional hole gas in aluminum delta-doped layer in silicon with a narrow doping profile and high carrier density. The p-type delta layer has not been well studied unlike a n-type delta layer by phosphine gas dosing. I will present our Hall measurements at 4 K using mesa-etched Hall bar device fabricated in Al delta-doped layer in Si with the hole carrier concentration, np ≈ 1.6 x 1014 /cm2, and mobility, μh ≈ 15 cm2/Vs. These densities are close to where a theoretical study predicted superconducting Si heavily doped with Al near 1 K [1], opening up possibilities for semiconductor/superconductor hybrid systems. Comparison of STM analysis and Hall measurements show ≈ 1.1 ± 10 % holes per dopant atom.
[1] Bourgeois and Blase, Appl. Phys. Lett, 90 142511 (2007).

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Presenters

  • Hyun-soo Kim

    • NIST -Natl Inst of Stds & Tech
    • National Institute of Standards and Technology

Authors

  • Hyun-soo Kim

    • NIST -Natl Inst of Stds & Tech
    • National Institute of Standards and Technology

  • Aruna Ramanayaka

    • NIST -Natl Inst of Stds & Tech
    • National Institute of Standards and Technology
    • Univ of Maryland-College Park

  • Ke Tang

    • NIST -Natl Inst of Stds & Tech
    • National Institute of Standards and Technology

  • Joseph Hagmann

    • National Institute of Standards and Technology
    • NIST -Natl Inst of Stds & Tech

  • Curt Richter

    • National Institute of Standards and Technology
    • NIST -Natl Inst of Stds & Tech
    • NIST - National Inst. of Stands & Tech

  • Michael Stewart

    • National Institute of Standards and Technology
    • NIST -Natl Inst of Stds & Tech

  • Joshua Pomeroy

    • NIST -Natl Inst of Stds & Tech
    • National Institute of Standards and Technology
    • National Institue of Standard and Technology