Total Ionizing Dose Effects on the 1<i>T</i>-TaS<sub>2</sub> Charge-Density-Wave Devices
ORAL
Abstract
The voltage controlled charge-density-wave (CDW) phase transition in quasi-2D 1T-TaS2 offers a possibility of using the switching behavior of these states for electronic applications. We have recently demonstrated a frequency tunable oscillator based on an integrated graphene–h-BN–TaS2 device that is capable of operating at room temperature [1]. In this work, we evaluate the total ionizing dose (TID) effect on 1T-TaS2 CDW devices by examining the current-voltage characteristics under X-ray irradiation at doses up to 1 Mrad(SiO2). We find that the threshold voltage, VTH, for the abrupt resistance change shifts by only ~2%, the resistance of the CDW states changes by less than ~2 % (low resistive state) and ~6.5 % (high resistive state), and the voltage oscillations function well after the full irradiation sequence [2]. We attributed the radiation hardness of these CDW devices to the high carrier concentration and absence of the gate dielectric in the structure. [1] G. Liu, et al., Nature Nanotechnology, 11, 845 (2016); [2] G. Liu, et al., IEEE Electron Device Letters (accepted, 2017) 10.1109/LED.2017.2763597.
*Acknowledgements: The work at UC Riverside was supported, in part, by NSF 2-DARE project EFRI-1433395, and UC-National Lab Collaborative Research and Training Program.
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Presenters
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Guanxiong Liu
- Electrical and computer Engineering, Univ of California - Riverside
- Electrical and Computer Engineering, University of California, Riverside
- University of California Riverside