Voltage Controlled Multi-bit Memory and Logic Operation in Manganite Nanostrips
POSTER
Abstract
Combining memory and logic functionality in one single device unit is highly attractive in developing next-generation nonvolatile devices. Manganites have been known to respond sensitively to electric field. Using this effect, we fabricate manganite strips with N pairs of side gates to control the total resistivity by side gate voltage. We demonstrate that the total resistivity of the manganite strips can have the 2N different levels by various gate voltage combinations. Logic operations can also be performed in such devices, which are promising for future computing systems beyond von Neumann architecture.
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Presenters
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Qian Shi
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University