Effect of Vanadium doping on dielectric properties of TiO<sub>2</sub>
ORAL
Abstract
The V doped TiO2 samples are prepared by the modified sol-gel process and sintered at 1400 °C. The phase formation is confirmed by XRD. The lattice parameters are decreased due to V doping. The V content in the samples is confirmed by EDX analysis. The grain sizes of all the samples are between 20-30 mm observed by SEM study. The dense nature of pellet surface is also revealed from SEM studies. The dielectric measurement is carried out in the frequency range from 1 Hz to 1 MHz. The dielectric constant increases in V doped TiO2 samples. The dielectric loss on the other hand, also increases with increasing doping concentration due to the presence of donor levels in the bandgap. The electrons in these donor levels can hop freely at room temperature. The high dielectric loss is a result of high conductivity which is arising out of these free hopping electrons.
*The authors are thankful to DST(Department of Science and Technology India) for providing Fund and SIC section (IIT Indore, Indore,India)
for providing FESEM facility.
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Presenters
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Nasima Khatun
- Physics, Indian Institute of Technology Indore