The Effect of Applied Strain on the Quasiparticle Band-Gap of Monolayer MoS<sub>2</sub>

ORAL

Abstract

Atomically thin materials such as single layer Molybdenum Disulfide (MoS2) have emerged as promising candidates for next generation flexible 2D electronics. However, few studies to date have investigated the electronic properties of these materials as a function of applied strain. In this work we use low temperature scanning tunneling microscopy and spectroscopy (STM/STS) to ellucidate the effect of strain on the quasiparticle band-gap of monolayer MoS2. Controlled strain was achieved by depositing single layer MoS2 on a flat substrate and then bending the substrate with a varying radius of curvature using a custom built sample holder.

*Use of the Center for Nanoscale Materials, an Office of Science user facility, was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.
This work was supported as part of the CCDM, an Energy Frontier Research Center fund

–

Presenters

  • Daniel Trainer

    • Physics Department, Temple University

Authors

  • Daniel Trainer

    • Physics Department, Temple University

  • Yuan Zhang

    • Argonne National Laboratory
    • Center for Nanoscale Materials, Argonne National Laboratory

  • Fabrizio Bobba

    • Physics Department, Salerno University
    • Physics, University of Salerno

  • Xiaoxing Xi

    • Physics Department, Temple University
    • Physics, Temple University

  • Saw Hla

    • Argonne National Laboratory
    • Physics & Astronomy, Ohio University
    • Argonne National Lab
    • Center for Nanoscale Materials, Argonne National Laboratory

  • Maria Iavarone

    • Physics Department, Temple University
    • Physics, Temple University