High Mobility Palladium Diselenide (PdSe<sub>2</sub>) Field Effect Transistors Using heavily <i>n</i>-doped Graphene Contacts

ORAL

Abstract

Two dimensional materials comprised of puckered pentagonal layers could enable a variety of optoelectronic, piezoelectronic, spintronic, and valleytronic applications due to the low symmetry of the lattice structure. PdSe2 is one such material of particular interest because of its high electron mobility and excellent chemical stability. However, in spite of its relatively small bandgap, the performance of few-layer PdSe2 field-effect transistors (FETs) has been largely limited by the presence of a substantial Schottky barrier, which is likely due to Fermi-leveling pinning. In this work, we report the fabrication of high mobility n-type PdSe2 FETs with hexagonal boron nitride passivated channels and graphene contacts. We achieve a typical room temperature field-effect mobility of ~ 140 cm2 V-1 s-1 in few-layer PdSe2 FETs, which increases to ~500 cm2 V-1 s-1 at 77 K. The low-temperature mobility is further improved by heavily n-doping the graphene contacts.

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Presenters

  • Arthur Bowman

    • Physics and Astronomy, Wayne State Univ
    • Physics and Astronomy, Wayne State University

Authors

  • Arthur Bowman

    • Physics and Astronomy, Wayne State Univ
    • Physics and Astronomy, Wayne State University

  • Kraig Andrews

    • Physics and Astronomy, Wayne State University

  • Upendra Rijal

    • Physics and Astronomy, Wayne State Univ
    • Physics and Astronomy, Wayne State University

  • Amanda Haglund

    • University of Tennessee
    • Materials Science and Engineering, The University of Tennessee

  • David Mandrus

    • Department of Materials Science and Engineering, The University of Tennessee
    • Oak Ridge National Lab
    • Oak Ridge National Laboratory
    • Department of Materials Science and Engineering, University of Tennessee
    • University of Tennessee
    • Materials Science and Technology, Oak Ridge National Laboratory
    • Materials Science and Engineering, The University of Tennessee
    • Materials Science and Engineering, University of Tennessee
    • Material Science and Technology Division, Oak Ridge National Laboratory
    • Oakridge National Laboratory
    • University of Tennessee, Knoxville
    • Univ of Tennessee, Knoxville

  • Zhixian Zhou

    • Physics and Astronomy, Wayne State Univ
    • Physics and Astronomy, Wayne State University