Scanning SQUID microscopy of ion-gel-gated MoS<sub>2</sub>

ORAL

Abstract

Atomically thin exfoliated MoS2 devices have been reported to superconduct at an n-type charge carrier density of ~ 1014 cm-2 [1] with a critical temperature of approximately ~2 K in a monolayer [2]. To achieve the high charge carrier density ionic gating has been employed. Here, we report progress towards implementing ion-gel-gating of MoS2 devices compatible with scanning probe measurements. To achieve this we spin coat an ionic gel to produce thicknesses below 1 μm, making it possible to bring a mesoscopic probe near the sample. This will allow us to perform local DC magnetometry and AC magnetic susceptibility measurements on these devices using scanning superconducting quantum interference device (SQUID) microscopy. By measuring the diamagnetic response of the superconducting state, we can identify spatial inhomogeneity in the transition temperature as well as the local London penetration depth at varying temperature.

[1] J. T. Ye et al. Science 338, 1193 (2012)
[2] D. Costanzo et al., Nature Nanotechnology 11, 339 (2016)

*This work was supported by the Cornell Center for Materials Research (NSF MRSEC, DMR-1719875) and performed in part at the Cornell NanoScale Facility, (NSF NNCI, Grant ECCS-1542081).

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Presenters

  • Alexander Jarjour

    • Cornell University

Authors

  • Alexander Jarjour

    • Cornell University

  • Brian Schaefer

    • Cornell University

  • George Ferguson

    • Cornell University
    • Department of Physics, Cornell University
    • Cornell Univ

  • David Low

    • Cornell University
    • Applied and Engineering Physics, Cornell University

  • Rusen Yan

    • Cornell Univ
    • Cornell University

  • Menyoung Lee

    • Cornell University

  • Debdeep Jena

    • Cornell Univ
    • Cornell University

  • Grace Xing

    • Cornell University

  • Erich Mueller

    • Cornell University
    • Department of Physics, Cornell University
    • Cornell Univ