Investigation of the anomalous Hall effect in Kagome lattice materials with <i>d</i>- and <i>f</i>-electrons

Recently, a large anomalous Hall effect due to magnetic frustration in the Kagome lattice with a non-collinear antiferromagnetic spin arrangement was observed in the Mn₃X (X = Ga, Ge, Sn) compounds. The Ni₃Sn crystal structure (P6₃/mmc) [1-4] of these materials is regarded as an excellent platform for understanding the mechanism of the anomalous Hall effect and may be a candidate for realizing novel topological phenomena in future memory storage devices or in sensors. It is important to discover and characterize new materials with non-collinear magnetic structures to understand the origin of the non-vanishing Berry curvature that leads to the large anomalous Hall effect. Here, we report the physical properties of novel d- and f-electron materials with the Ni₃Sn-type crystal structure.
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