Substrate Effects of TiSe<sub>2</sub> Thin Film on TiO<sub>2</sub>

ORAL

Abstract

TiSe2 is a layered material in the family of Transition Metal Dichalcogenide, and bulk TiSe2 single crystal undegoes a Charge Density Wave transition at temperature below ~200 K. In this talk, I will talk about growth and analysis of TiSe2 thin films on TiO2 rutile substrates, and discuss the substrate effect on the electronic band structure and transport properties of TiSe2. A comparison between TiSe2 films on TiO2 and TiSe2 films on bilayer graphene will also be given.

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Presenters

  • Tao Jia

    • Stanford University

Authors

  • Tao Jia

    • Stanford University

  • Slavko Rebec

    • Stanford University

  • Kejun Xu

    • Stanford University and SLAC National Accelerator Laboratory
    • Stanford University
    • Applied Physics, Stanford University

  • Hafiz Sohail

    • Stanford University

  • Shujie Tang

    • Stanford University
    • Lawrence Berkeley National Laboratory
    • SIMIS, Stanford University

  • Makoto Hashimoto

    • SLAC
    • SLAC, Stanford University
    • SLAC National Laboratory
    • Stanford University
    • SLAC - Natl Accelerator Lab
    • SLAC National Accelerator Laboratory
    • SSRL, SLAC

  • Donghui Lu

    • SSRL/SLAC
    • SLAC
    • SLAC, Stanford University
    • SLAC National Laboratory
    • Stanford University
    • SLAC - Natl Accelerator Lab
    • SLAC National Accelerator Laboratory
    • SSRL, SLAC

  • Robert Moore

    • Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory
    • SLAC
    • SLAC, Stanford University

  • Zhi-Xun Shen

    • Stanford University
    • SLAC National Accelerator Laboratory
    • SLAC - Natl Accelerator Lab
    • Stanford Univ
    • SIMIS, Stanford University
    • Applied Physics, Stanford Univ
    • Stanford University and SLAC National Accelerator Laboratory
    • Applied Physics, Stanford University