Electronic structure of epitaxially-grown monolayer 1T’-MoTe<sub>2</sub>
ORAL
Abstract
We have investigated the electronic structure of monolayer 1T’-MoTe2 grown by molecular beam epitaxy on bilayer graphene substrate. Angle-resolved photoemission measurements found the spin-orbit-coupling induced breaking of the band degeneracy points between the valence and conduction bands. The strength of spin-orbit-coupling is found to be insufficient to open a band gap, which makes monolayer 1T’-MoTe2 on bilayer graphene a semimetal.
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Presenters
Sung-Kwan Mo
Lawrence Berkeley National Lab
Lawrence Berkeley Natl Lab
Lawrence Berkeley National Laboratory
Pohang Accelerator Laboratory
Advanced Light Source, Lawrence Berkeley National Laboratory
Authors
Sung-Kwan Mo
Lawrence Berkeley National Lab
Lawrence Berkeley Natl Lab
Lawrence Berkeley National Laboratory
Pohang Accelerator Laboratory
Advanced Light Source, Lawrence Berkeley National Laboratory
Shujie Tang
Stanford University
Lawrence Berkeley National Laboratory
SIMIS, Stanford University
Chaofan Zhang
SIMIS, Stanford University
Stanford University
Chunjing Jia
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
SLAC National Accelerator Laboratory
SIMIS, Stanford University
SLAC - Natl Accelerator Lab
Stanford University
Stanford Univ
Thomas Devereaux
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Stanford Univ
SLAC and Stanford University
SLAC National Accelerator Laboratory
SLAC - Natl Accelerator Lab
Stanford Institute for Materials and Energy Sciences, SLAC National Laboratory
Stanford University
SIMIS, Stanford University
Physics, Stanford University
SLAC National Lab and Stanford University
SIMES, SLAC and Stanford University
Zhi-Xun Shen
Stanford University
SLAC National Accelerator Laboratory
SLAC - Natl Accelerator Lab
Stanford Univ
SIMIS, Stanford University
Applied Physics, Stanford Univ
Stanford University and SLAC National Accelerator Laboratory
Applied Physics, Stanford University
Hyejin Ryu
Lawrence Berkeley National Lab
Lawrence Berkeley National Laboratory
Lawrence Berkeley Natl Lab
Choongyu Hwang
Pusan National University
Pusan Natl Univ
Makoto Hashimoto
SLAC
SLAC, Stanford University
SLAC National Laboratory
Stanford University
SLAC - Natl Accelerator Lab
SLAC National Accelerator Laboratory
SSRL, SLAC
Donghui Lu
SSRL/SLAC
SLAC
SLAC, Stanford University
SLAC National Laboratory
Stanford University
SLAC - Natl Accelerator Lab
SLAC National Accelerator Laboratory
SSRL, SLAC
Zhi Liu
Shanghai Institute of Microsystem and Information Technology