Defect Formation on the Surface of Giant Rashba Systems
ORAL
Abstract
Polar discontinuity at interfaces of different materials may give nontrivial atomic or electronic properties. A well-known case is the interface between insulating LaAlO3 and SrTiO3 perovskites, which possesses electron gas with extremely high carrier mobility. No consensus has been reached regarding the origin of this conductive layer, but many studies indicate polar discontinuity plays a significant role. Recently, the family of BiTeX (X= I, Br, Cl) is reported as polar semiconductors with giant Rashba-type spin splitting effect. They have drawn intensive research interests since then because of the great potentials for practical spintronic functions. The bulk polar atomic corrugations give rise to significant polar discontinuities near the surface. Via scanning tunneling microscopy (STM), we found that the cleaving temperature can dramatically influence the defect formation on the surface of giant Rashba semiconductor BiTeCl. Here, we will present the detailed STM and DFT studies to understand the underlying mechanism.
*This work is supported by NSF DMR-1506618.
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Presenters
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Wenhan Zhang
- Rutgers-Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University
- Rutgers Univ
- Physics and Astronomy, Rutgers Univ