Electronic Properties of Defects in Few-Layer MoS<sub>2</sub> Films
ORAL
Abstract
We report on structural and electronic properties of defects in chemical vapor-deposited monolayer and few-layer MoS2 films. Scanning tunneling microscopy, Kelvin probe force microscopy, and transmission electron microscopy were used to obtain quantitative measurements of the local density of states, work function and nature and mobility of defects. These defects include point defects such as S and Mo vacancies as well as extended defects such as film edges and grain boundaries.
*This work was supported as part of the CCDM, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science under Award #DE-SC0012575. The electron microscopy facilities at BNL were supported by the Materials Science and Engineering Divisions, Office of Basic Energy Sci
–
Presenters
Marcus Forst
Physics Department, Temple University
Authors
Marcus Forst
Physics Department, Temple University
Daniel Trainer
Physics Department, Temple University
Marian Precner
Physics Department, Drexel University
Tomas Polakovic
Physics Division, Argonne National Laboratory
Materials Science Division, Argonne National Laboratory
Physics Department, Drexel University
Qiao Qiao
Condensed Matter Physics & Materials Science Department, Brookhaven National Laboratory
Yimei Zhu
Condensed Matter Physcis and Materials Science Departement, Brookhaven National Laboratory
Brookhaven National Laboratory
Condensed Matter Physics & Materials Science, Brookhaven National Laboratory
Brookhaven Natl Lab
Brookhaven National Lab
Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory
Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory
Condensed Matter Physics & Materials Science Department, Brookhaven National Laboratory
