Study of current bias induced carrier heating effect in the regime of Shubnikov de Haas oscillations in high mobility GaAs/Al<sub>x</sub>GaAs<sub>1-x </sub>two-dimensional electron system
ORAL
Abstract
In a current carrying metallic system, temperature of the carriers depends on Joule heating and energy relaxation through electron diffusion or electron-phonon coupling [01, 02, 03]. In this study, carrier heating induced by ac bias current in high mobility GaAs/AlxGaAs1-x two-dimensional electron system at temperature range of 1.6 ≤ T ≤ 4.2 K was investigated using alteration in the line shape of Shubnikov de Haas oscillations. Haas oscillation was analyzed, and fit base on Lifshitz-Kosevich theory and extracted carrier temperatures indicate that the electron diffusion predominant in the energy relaxation process of the system and the 2DES is in a quasi-equilibrium state where the hot electron situation is attained.
[01] Zhenbing Tan, Changling Tan, Li Ma, G. T. Liu, L. Lu, and C. L. Yang, Phys. Rev. B 84, 115429 (2011).
[02] X. L. Lei, and S. Y. Liu, Phys. Rev. B 72, 075345 (2005).
[03] J. K. Viljas, and T. T. Heikkilä, Phys. Rev. B 81, 245404 (2010).
[01] Zhenbing Tan, Changling Tan, Li Ma, G. T. Liu, L. Lu, and C. L. Yang, Phys. Rev. B 84, 115429 (2011).
[02] X. L. Lei, and S. Y. Liu, Phys. Rev. B 72, 075345 (2005).
[03] J. K. Viljas, and T. T. Heikkilä, Phys. Rev. B 81, 245404 (2010).
*
U.S. Department of Energy, Grant No. DE-SC0001762
Army Research Office under W911NF-14-2-0076 and W911NF-15-1-0433
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Presenters
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Chathuranga Munasinghe
- Physics and Astronomy , Georgia State University
- Physics and Astronomy, Georgia State University, 25 Park Place, #605, Georgia State University