Gate-Tunable Photomemory Effect in MoS<sub>2</sub> Transistors

ORAL

Abstract

We report a photomemory effect with the record of on/off ratio and retention time in MoS2 transistors. The photomemory is controlled by gate voltage application, exhibiting multilevel states. Further, a memory state is recorded mainly on the laser spot area, demonstrating strong potential for photomemory miniaturization. The photomemory effect presented here is based on a photodoping effect. In such a way, the combined actions of laser exposure and application of gate potentials set large densities of charges in MoS2 channel. Such outstanding modification of MoS2 conductance allows definition of the binary memory states. In this way, our work opens possibilities for novel memory architectures.

*FAPEMIG, CAPES, CNPQ, INCT/Nanocarbono, CBPF, CCS, Rede de Nano-
Instrumentação, Pós-graduação em Física e Pró-Reitoria de pesquisa da UFMG.

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Presenters

  • Andreij Gadelha

    • Physics, Univ Fed de Minas Gerais

Authors

  • Andreij Gadelha

    • Physics, Univ Fed de Minas Gerais

  • Alisson Cadore

    • Physics Department, Institute of Exact Sciences - UFMG
    • Physics, Univ Fed de Minas Gerais

  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • National Institute for Material Science
    • Advanced Materials Laboratory, National Institute for Materials Science
    • National Institute of Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science
    • National Institute for Materials Science (NIMS
    • Advanced Materials Laboratory, NIMS
    • National Institute for Materials Science, Advanced Materials Laboratory
    • National Institue for Materials Science
    • National Institute of Material Science
    • National Institute for Matericals Science
    • Advanced Materials Laboratory
    • National Institute for Materials Science, 1-1 Namiki
    • Advanced materials laboratory, National institute for Materials Science
    • NIMS-Japan

  • Takashi Taniguchi

    • National Institute for Materials Science
    • NIMS
    • National Institute for Material Science
    • Advanced Materials Laboratory, National Institute for Materials Science
    • National Institute of Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science
    • National Institute for Materials Science (NIMS
    • Advanced Materials Laboratory, NIMS
    • National Institute for Materials Science, Advanced Materials Laboratory
    • National Institue for Materials Science
    • National Institute of Material Science
    • National Institute for Matericals Science
    • Advanced Materials Laboratory
    • National Institute for Materials Science, 1-1 Namiki
    • NIMS-Japan

  • Ana de Paula

    • Physics, Univ Fed de Minas Gerais

  • Leandro Malard

    • Physics, Univ Fed de Minas Gerais

  • Rodrigo Gribel Lacerda

    • Physics, Univ Fed de Minas Gerais

  • Leonardo Campos

    • Physics Department, Institute of Exact Sciences - UFMG
    • Physics, Univ Fed de Minas Gerais