Air-Stable Room-Temperature Mid-Infrared Photodetectors Based on hBN/Black Arsenic Phosphorus/hBN Heterostructures

ORAL

Abstract

Recently, layered black phosphorus (BP) has been explored intensively for infrared optoelectronic applications due to its high carrier mobility and the moderate direct bandgap (about 0.33 electron volt) in the thin film form. In this work, we demonstrate mid-infrared photodetectors based on black arsenic phosphorus (b-AsxP1-x), whose bandgap can be below 0.15 electron volt by the introduction of arsenic. Mid-infrared photodetectors have been demonstrated leveraging the hexagonal boron nitride (hBN)/b-As0.83P0.17/hBN heterostructures. The encapsulation of hBN prevents b-As0.83P0.17 from oxidization and eliminates surface trap states, therefore the as-fabricated photodetectors work in intrinsic photoconductive mode, and show peak room-temperature extrinsic responsivity of 320, 24.7, and 1.03 mA/W at 3.4, 5.0, and 7.7 μm, respectively. The broadband and high-speed detection at mid-infrared illustrates the potential of b-As0.83P0.17 for optoelectronic applications, such as thermal imaging, biomedical sensing, and free-space mid-infrared communications.

*We thank the Air Force of Scientific Research, the Office of Naval Research and Yale University for the support of this work.

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Presenters

  • Shaofan Yuan

    • Department of Electrical Engineering, Yale Univ

Authors

  • Shaofan Yuan

    • Department of Electrical Engineering, Yale Univ

  • Chenfei Shen

    • Univ of Southern California
    • Mork Family Department of Chemical Engineering and Materials Science, Univeristy of Southern California
    • Mork Family Department of Chemical Engineering and Materials Science, University of Southern California

  • Bingchen Deng

    • Department of Electrical Engineering, Yale University
    • Department of Electrical Engineering, Yale Univ

  • Xiaolong Chen

    • Department of Electrical Engineering, Yale University
    • Department of Electrical Engineering, Yale Univ

  • Qiushi Guo

    • Department of Electrical Engineering, Yale University
    • Department of Electrical Engineering, Yale Univ

  • Yuqiang Ma

    • Ming Hsieh Department of Electrical Engineering, University of Southern California
    • Univ of Southern California

  • Ahmad Abbass

    • Ming Hsieh Department of Electrical Engineering, University of Southern California
    • Univ of Southern California

  • Bilu Liu

    • Ming Hsieh Department of Electrical Engineering, University of Southern California
    • Univ of Southern California

  • Ralf Haiges

    • Univ of Southern California
    • Loker Hydrocarbon Research Institue and Department of Chemistry, University of Southern California

  • Claudia Ott

    • Department of Chemistry, Technical University Munich

  • Tom Nilges

    • Department für Chemie, Technische Universität München
    • Department of Chemistry, Technical University Munich

  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • National Institute for Material Science
    • Advanced Materials Laboratory, National Institute for Materials Science
    • National Institute of Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science
    • National Institute for Materials Science (NIMS
    • Advanced Materials Laboratory, NIMS
    • National Institute for Materials Science, Advanced Materials Laboratory
    • National Institue for Materials Science
    • National Institute of Material Science
    • National Institute for Matericals Science
    • Advanced Materials Laboratory
    • National Institute for Materials Science, 1-1 Namiki
    • Advanced materials laboratory, National institute for Materials Science
    • NIMS-Japan

  • Takashi Taniguchi

    • National Institute for Materials Science
    • NIMS
    • National Institute for Material Science
    • Advanced Materials Laboratory, National Institute for Materials Science
    • National Institute of Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science
    • National Institute for Materials Science (NIMS
    • Advanced Materials Laboratory, NIMS
    • National Institute for Materials Science, Advanced Materials Laboratory
    • National Institue for Materials Science
    • National Institute of Material Science
    • National Institute for Matericals Science
    • Advanced Materials Laboratory
    • National Institute for Materials Science, 1-1 Namiki
    • NIMS-Japan

  • Ofer Sinai

    • Department of Electrical Engineering, Bar-Ilan University
    • Faculty of Engineering and Bar-Ilan Institute for Nanotechnology and Advanced Materials, Bar-Ilan University

  • Doron Naveh

    • Department of Electrical Engineering, Bar-Ilan University
    • Faculty of Engineering and Bar-Ilan Institute for Nanotechnology and Advanced Materials, Bar-Ilan University

  • Chongwu Zhou

    • Department of Electrical Engineering, University of Southern California
    • Ming Hsieh Department of Electrical Engineering, University of Southern California
    • Univ of Southern California
    • Mork Family Department of Chemical Engineering and Materials Science & Ming Hsieh Department of Electrical Engineering, University of Southern California

  • Fengnian Xia

    • Department of Electrical Engineering, Yale University
    • Department of Electrical Engineering, Yale Univ