Symmetric-Gapped Surface States of Fractional Topological Insulators

ORAL

Abstract

We construct the symmetric-gapped surface states of a fractional topological insulator with electromagnetic θ-angle θem = π/3 and a discrete Z3 gauge field. They are the proper generalizations of the T-pfaffian state and pfaffian/anti-semion state and feature an extended periodicity compared with their of “integer” topological band insulators counterparts. We demonstrate that the surface states have the correct anomalies associated with time-reversal symmetry and charge conservation.

*This work is supported by the Brain Korea 21 PLUS Project of Korea Government (G.Y.C.), Grant No. 2016R1A5A1008184 under NRF of Korea (G.Y.C.), NSF Grant No. DMR1653535 at the University of Virginia (J.C.Y.T.), and NSF grant No. DMR 1408713 at the University of Illinois (E.F). G.Y.C. also acknowledges th

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Presenters

  • Gil Young Cho

    • School of Physics, Korea Institute for Advanced Study
    • Korea Advanced Institute of Science and Technology

Authors

  • Gil Young Cho

    • School of Physics, Korea Institute for Advanced Study
    • Korea Advanced Institute of Science and Technology

  • Jeffrey Teo

    • Physics Department, University of Virginia

  • Eduardo Fradkin

    • Physics, University of Illinois
    • Physics, Univ of Illinois - Urbana
    • Physics Department, University of Illinois at Urbana-Champaign