Anomalous Hall effect in high mobility La doped EuTiO<sub>3</sub> films on LSAT substrates grown by gas source molecular beam epitaxy

ORAL

Abstract

A magnetic semiconductor EuTiO3 is one of the ideal systems to control the anomalous Hall effect (AHE) by tuning the Fermi level through the Berry curvatures. In our previous work, we demonstrated the sign of AHE was reversed by shifting the Fermi level for La doped EuTiO3 (Eu1-xLaxTiO3) films on LSAT substrates grown by pulsed laser deposition (PLD). However, the observed AHE for the PLD films did not fully reflect the fine structures of band crossing due to the short scattering life time.
Here, high crystalline quality films of Eu1-xLaxTiO3 were successfully grown on LSAT substrates by metalorganic gas source molecular beam epitaxy (MOMBE). The electron mobility reaches 300 cm2V-1s-1 at 2 K, which is one order of magnitude higher than that of PLD films. An additional term of AHE, which is not proportional to magnetization curve, was clearly observed for high mobility MOMBE films. Model calculations reveal that the change of Zeeman energy splitting during the magnetization process causes the non-monotonic behavior of AHE. These results strongly suggests that the high mobility EuTiO3 film is an excellent platform for investigating transport phenomena of spin polarized electrons.

*This work was partly supported by the CREST-JST (no. JPMJCR16F1) and PRESTO-JST (no. JPMJPR1527).

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Presenters

  • Kei Takahashi

    • RIKEN
    • RIKEN Center for Emergent Matter Science (CEMS)
    • RIKEN Center for Emergent Matter Science
    • CEMS, RIKEN
    • Center for Emergent Matter Science (CEMS), RIKEN

Authors

  • Kei Takahashi

    • RIKEN
    • RIKEN Center for Emergent Matter Science (CEMS)
    • RIKEN Center for Emergent Matter Science
    • CEMS, RIKEN
    • Center for Emergent Matter Science (CEMS), RIKEN

  • Hiroaki Ishizuka

    • Department of Applied Physics, The University of Tokyo
    • Department of Applied Physics, University of Tokyo
    • Applied Physics, Univ of Tokyo

  • Tomoki Murata

    • Center for Emergent Matter Science (CEMS), RIKEN

  • Qing Wang

    • Center for Emergent Matter Science (CEMS), RIKEN

  • Yoshinori Tokura

    • RIKEN Center for Emergent Matter Science (CEMS)
    • CEMS, RIKEN
    • RIKEN
    • Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo
    • RIKEN Center for Emergent Matter Science
    • Center for Emergent Matter Science (CEMS), RIKEN
    • Department of Applied Physics and Quantum Phase Electronics Center (QPEC), University of Tokyo

  • Naoto Nagaosa

    • Univ of Tokyo, Riken CEMS
    • RIKEN CEMS
    • Department of Applied Physics, University of Tokyo
    • Department of Applied Physics, The University of Tokyo

  • Masashi Kawasaki

    • Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo
    • Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), the University of Tokyo
    • Univ of Tokyo
    • The University of Tokyo
    • Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo
    • Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), Univ. of Tokyo
    • Applied Physics, University of Tokyo
    • Department of Applied Physics, The University of Tokyo
    • Department of Applied Physics, University of Tokyo