Temperature-induced transport asymmetry around half-filling in high Landau levels
ORAL
Abstract
We report a temperature dependence study of transport properties in an ultra-low disorder GaAs two-dimensional electron system around half-filling of the N = 2 Landau level. In this study, we performed measurements of both the zero-bias magnetoresistance Rxx and the differential resistance dVxx/dI along the hard transport direction around filling factor ν = 9/2 at different temperatures. At high temperature, T = 100 mK, both Rxx and dVxx/dI are symmetric around ν = 9/2. However, as temperature is decreased towards T = 10 mK both Rxx and dVxx/dI become asymmetric: the Rxx peak shifts to lower magnetic field away from exact half-filling, and dVxx/dI shows strong non-linearity on the high field side of the Rxx peak. Our data suggests that a temperature induced breakdown of particle-hole symmetry occurs at low temperatures. At high temperature T = 100 mK where the system behaves as a standard anisotropic nematic, particle-hole symmetry is restored.
*This work was supported by the Department of Energy, Office of Basic Energy Sciences, under Award number DE-SC0006671. Additional support for sample growth from the W. M. Keck Foundation and Microsoft Station Q is gratefully acknowledged.
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Presenters
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Qi Qian
- Physics, Purdue University
- Purdue University
- Purdue Univ