Mobility Optimization in High-Pressure-Oxygen-Sputtered Epitaxial Ba<sub>1-<i>x</i></sub>La<i><sub>x</sub></i>SnO<sub>3 </sub>Thin Films
ORAL
Abstract
Due to its high 300 K mobility and wide gap, perovskite BaSnO3 is of high interest for oxide electronics. Despite rapid progress, many questions remain regarding transport behavior, particularly in films, where defects limit mobility. While many publications investigating epitaxial BaSnO3 to date have focused on PLD or MBE grown films, here we focus on an industrially relevant, scalable technique: high pressure oxygen sputtering. In this work, single-phase, stoichiometric, smooth, epitaxial films of Ba0.98La0.02SnO3 have been grown, and the impact of thickness, growth rate, deposition temperature, and substrate on mobility systematically studied. 300 K mobilities up to 70 cm2V-1s-1 at 2 ×1020 cm-3 are obtained, even in 380-Å-thick unbuffered films. Important trends include a monotonic increase in mobility with deposition temperature, reduced mobility and carrier freeze-out at low thickness, optimal mobility around 1200 Å thickness, and insensitivity to the substrate mismatch. These are discussed in terms of accompanying structural characterization data, particularly transmission electron microscopy.
*Work supported by the UMN NSF MRSEC.
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Presenters
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William Postiglione
- Chemical Engineering and Materials Science, Univ of Minnesota - Twin Cities