Transport in topological insulator thin films with bulk-surface coupling: interference corrections and conductance fluctuations
ORAL
Abstract
Motivated by the experimental difficulty to produce topological insulators of the Bi2Se3 family with pure surface-state conduction, we study the effect that the bulk can have on the low-temperature transport properties of gated thin TI films. In this talk, I will mainly discuss conductance fluctuations in various parameter regimes. I will argue that combined measurements of conductance fluctuations and interference corrections, weak localization or weak anti-localization, can provide an improved understanding of the physics underlying the low-temperature transport processes in thin TI films with bulk-surface coupling.
*Financial support by the Alexander von Humboldt foundation and the College of Arts and Sciences at the University of Alabama, Tuscaloosa is gratefully acknowledged. We also acknowledge the hospitality of the Spin Phenomena Interdisciplinary Center (SPICE), where parts of the work were done.
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Presenters
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Georg Schwiete
- Univ of Alabama - Tuscaloosa
- University of Alabama