Landau Level Energy Gaps in Ultrahigh Quality Black Phosphorus Devices
ORAL
Abstract
We report black phosphorus (BP) field effect transistors with low temperature record field effect mobility up to 55,000 cm2/Vs. Thanks to the ultrahigh device quality, the integer quantum Hall effect is observed with full spin degeneracy lifting over a wide range of magnetic field 10 T – 45 T. Landau level (LL) energy gaps of filling factors ν=-1, -2, -3, -4, -5, and -6 are measured and demonstrate a linear dependence on magnetic field. This settles a theoretical controversy on the effects of BP’s anisotropic crystal structure on its LL energetics.
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Presenters
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Son Tran
- Physics, Ohio State University