High-performance, hysteresis free, ambipolar hybrid perovskite based field-effect transistors

ORAL

Abstract

Hybrid perovskites are solution processed crystalline materials with excellent electronic and optical properties, which enables high-efficiency optoelectronic devices. However, hybrid perovskites-based field effect transistor operation at room temperature has remained elusive. This is due to the non-reproducibility induced by polar nature of the structure coupled with ionic motions, which screens the capacitively coupled gate voltage. In this study, we report high-performance, hysteresis-free ambipolar FETs using highly crystalline hybrid perovskites thin films, operating at room temperature. We systematically improved the film quality, the effect of high-K dielectrics between the perovskites and gate. As a result, we obtained FETs with high trans-conductance with low subthreshold slopes leading to an on/off ration >104. Moreover, we achieve ambipolar transport at room temperature that strongly correlates to the choice of the gate-dielectric, that allow to tune the Fermi energy of perovskites for electrons and holes injections. We anticipate these results will open up the systematic investigation on the electronic properties in hybrid perovskites materials, for the opportunities to discover novel devices functionalities such as ultrasensitive photo-transistors and spin FETs.

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Presenters

  • Noelia Devesa Canicoba

    • Materials Physics and Applications Division, Los Alamos National Laboratory

Authors

  • Noelia Devesa Canicoba

    • Materials Physics and Applications Division, Los Alamos National Laboratory

  • Kasun Fernando

    • Department of Electrical Engineering, University of Louisville

  • Jean-Christophe Blancon

    • Los Alamos National Laboratory
    • Materials Physics and Applications Division, Los Alamos National Laboratory

  • Fangze Liu

    • Los Alamos National Laboratory
    • Materials Physics and Applications Division, Los Alamos National Laboratory

  • Laurent Le Brizoual

    • Institute of Electronics and Telecommunications of Rennes (IETR), UMR CNRS 6164, University of Rennes 1

  • Regis Rogel

    • Institute of Electronics and Telecommunications of Rennes (IETR), UMR CNRS 6164, University of Rennes 1

  • Jacky Even

    • INSA FOTON
    • INSA de Rennes
    • Université de Rennes 1
    • Fonctions Optiques pour les Technologies de l’Information (FOTON), Institut National des Sciences Appliquées (INSA) de Rennes, CNRS, UMR 6082

  • Bruce W. Alphenaar

    • Department of Electrical Engineering, University of Louisville

  • Wanyi Nie

    • Los Alamos National Laboratory
    • Los Alamos National Lab
    • Materials Physics and Applications Division, Los Alamos National Laboratory

  • Aditya Mohite

    • MPA-11: Materials Synthesis and Integrated Devices, Los Alamos National Laboratory
    • Los Alamos National Laboratory
    • Los Alamos National Lab
    • Materials Physics and Applications Division, Los Alamos National Laboratory