Effects of pressure on the magnetic anisotropy of ferromagnetic insulator Cr$_{\mathrm{2}}$Ge$_{\mathrm{2}}$Te$_{\mathrm{6}}$

ORAL

Abstract

Cr$_{\mathrm{2}}$Ge$_{\mathrm{2}}$Te$_{\mathrm{6}}$ is an interesting atomically layered ferromagnetic insulator with space group $R\overline 3 $ that has a Curie temperature of \textasciitilde 61 K and a band gap of \textasciitilde 0.2 eV. Owing to the van der Waals nature of the crystal structure, both electronic and magnetic properties depends on the interlayer coupling; therefore, it is interesting to study the effects of the interlayer spacing on physical properties. In this study, we apply a hydrostatic pressure to a CGT crystal up to 2000 PSI while measuring its magneto-transport properties with an external magnetic field applied along the c-axis of CGT. With increasing pressure, we observe a systematic increase in the anisotropic magnetoresistance ratio accompanied by a decrease in the band gap. In the meantime, the saturation field in the magnetoresistance increases as the pressure increases, indicating that the magnetization gradually favors to be in the ab-plane. This induced anisotropy change could be attributed to the increased interlayer coupling as the layers are bought closer to each other.

*DOE BES Award No. DEFG02-07ER46351

Authors

  • Zhisheng Lin

    • Univ of California - Riverside
  • Mark Lohmann

    • Univ of California - Riverside
    • Department of Physics and Astronomy, UC, Riverside
  • Chi Tang

    • Univ of California - Riverside
  • J. X. Li

    • Univ of California - Riverside
    • UC, Riverside, CA
  • Wenyu Xing

    • Peking University, Beijing,China
  • Jiangnan Zhong

    • Peking University, Beijing,China
  • Shuang Jia

    • Peking University, Beijing,China
    • ICQM, School of Physics, Peking University
    • International Center for Quantum Materials, School of Physics, Peking University, China Collaborative Innovation Center of Quantum Matter, Beijing,100
    • Peking University
  • Wei Han

    • Peking University, Beijing,China
    • International Center for Quantum Materials, Peking University, Beijing 100871, China
  • Jing Shi

    • Univ of California - Riverside