Fabrication of Josephson Junction without shadow evaporation

We developed a new method of fabricating Josephson Junction (Al/AlO$_{\mathrm{X}}$/Al) without shadow evaporation. Statistics from room temperature junction resistance and measurement of qubits are presented. Unlike the traditional ``Dolan Bridge'' technique, this method requires two individual lithographies and straight evaporations of Al. Argon RF plasma is used to remove native AlO$_{\mathrm{X}}$ after the first evaporation, followed by oxidation and second Al evaporation. Junction resistance measured at room temperature shows linear dependence on $P_{ox} $ (oxidation pressure), $\sqrt {t_{ox} } $ (oxidation time), and inverse proportional to junction area. We have seen 100{\%} yield of qubits made with this method. This method is promising because it eliminates angle dependence during Junction fabrication, facilitates large scale qubits fabrication.