High-frequency effects in antiferromagnetic Sr$_{\mathrm{\mathbf{3}}}$\textbf{Ir}$_{\mathrm{\mathbf{2}}}$\textbf{O}$_{\mathrm{\mathbf{7}}}$

Antiferromagnetic (AFM) spintronics is one of many promising routes for `beyond the CMOS' technologies where unique properties of AFM materials are exploited to achieve new and improved functionalities. AFMs are especially interesting for high-speed memory applications thanks to their high natural frequencies. Here we report the effects of high-frequency (microwave) currents on transport properties of antiferromagnetic Mott insulator Sr$_{\mathrm{3}}$Ir$_{\mathrm{2}}$O$_{\mathrm{7}}$. The microwaves at 3-7 GHz were found to affect the material's current-voltage characteristic and produce resonance-like features that we tentatively associate with the dissipationless magnonics recently predicted to occur in antiferromagnetic insulators subject to ac electric fields [1]. Our observations support the potential of antiferromagnetic materials for high-speed/high-frequency spintronic applications. This work was supported in part by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA, by NSF grants DMR-1207577, DMR-1265162, DMR-1600057, and DMR-1122603, and by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2015-CRG4-2626. [1] W. Chen and M. Sigrist, Phys. Rev. Lett. 114, 157203 (2015).