2D Electronic Devices and Device Physics

Presentations

• Extraction of interlayer coupling and hopping potentials with misaligned hBN tunnel barriers in graphene/hBN/graphene tunnel FETs

  ORAL

  March 16, 2017, 2:30 PM – March 16, 2017, 2:42 PM

  Authors

  • Amithraj Valsaraj

    • Univ of Texas, Austin

  • Leonard F. Register

    • Univ of Texas, Austin

  • Sanjay K. Banerjee

    • Univ of Texas, Austin
    • Microelectronics Research Center, University of Texas at Austin
    • The University of Texas at Austin

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• Electrical and Optical Characteristics of Undoped and Se-Doped Bi$_{\mathrm{2}}$S$_{\mathrm{3}}$ Transistors

  ORAL

  March 16, 2017, 2:42 PM – March 16, 2017, 2:54 PM

  Authors

  • Colin Kilcoyne

    • State Univ of NY - Buffalo
    • Department of Physics, State Univ of NY - Buffalo

  • Ali Alsaqqa

    • State Univ of NY - Buffalo
    • Department of Physics, State Univ of NY - Buffalo

  • Ajara A. Rahman

    • Department of Chemistry, University of Utah

  • Luisa Whittaker-Brooks

    • Department of Chemistry, University of Utah

  • G. Sambandamurthy

    • State Univ of NY - Buffalo
    • Department of Physics, State Univ of NY - Buffalo

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• Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS

  ORAL

  March 16, 2017, 2:54 PM – March 16, 2017, 3:06 PM

  Authors

  • Sukrit Sucharitakul

    • Department of Physics, Case Western Reserve University
    • Case Western Reserve University

  • Rajesh Kumar

    • Department of Chemistry, National Taiwan University,

  • Raman Sankar

    • Center for Condensed Matter Sciences, National Taiwan University

  • Fang-Cheng Chou

    • Center for Condensed Matter Sciences, National Taiwan University

  • Yit-Tsong Chen

    • Department of Chemistry, National Taiwan University,

  • Chuhan Wang

    • Department of Physics, University of Northern Iowa

  • Cai He

    • Department of Physics, University of Northern Iowa

  • Rui He

    • University of Northern Iowa
    • Department of Physics, University of Northern Iowa
    • Univ of Northern Iowa

  • Xuan Gao

    • Department of Physics, Case Western Reserve University
    • Case Western Reserve Univ

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• Valley FETs in graphene

  ORAL

  March 16, 2017, 3:06 PM – March 16, 2017, 3:18 PM

  Authors

  • Yu-Shu Wu

    • National Tsing-Hua University
    • Natl Tsing Hua Univ

  • Feng-Wu Chen

    • National Tsing-Hua University

  • Mu-Kuen Lee

    • National Tsing-Hua University

  • Maio-Ling Lin

    • National Tsing-Hua University

  • Ning-Yuan Lue

    • National Tsing-Hua University

  • Yen-Chun Chen

    • National Tsing-Hua University

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• Shot noise detection in hBN-based tunnel junctions

  ORAL

  March 16, 2017, 3:18 PM – March 16, 2017, 3:30 PM

  Authors

  • Panpan Zhou

    • Department of Physics and Astronomy, Rice University, USA

  • Will Hardy

    • Applied Physics Program, Smalley-Curl Institute, Rice University, USA

  • Kenji Watanabe

    • National Institute for Materials Science, Japan

  • Takashi Taniguchi

    • National Institute for Materials Science, Japan

  • Douglas Natelson

    • Department of Physics and Astronomy, Rice University, USA

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• Strong Coulomb scattering effects in monolayer WS$_{\mathrm{2}}$ transistor analyzed by low-frequency noise measurement

  ORAL

  March 16, 2017, 3:30 PM – March 16, 2017, 3:42 PM

  Authors

  • Yoojoo Yun

    • CINAP, IBS, DOES, SKKU, Suwon 16419, Korea

  • Min-Kyu Joo

    • CINAP, IBS, DOES, SKKU, Suwon 16419, Korea

  • Seokjoon Yun

    • CINAP, IBS, DOES, SKKU, Suwon 16419, Korea

  • Young Hee Lee

    • CINAP, IBS, DOES, SKKU, Suwon 16419, Korea

  • Dongseok Suh

    • DOES, SKKU, Suwon 16419, Korea

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• Abstract Withdrawn

  ORAL · Withdrawn

  March 16, 2017, 3:42 PM – March 16, 2017, 3:54 PM

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• Interface states analysis in atomically thin MoS$_{\mathrm{2}}$ FET

  ORAL

  March 16, 2017, 3:54 PM – March 16, 2017, 4:06 PM

  Authors

  • Nan Fang

    • Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan

  • Kosuke Nagashio

    • 1Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan 2 PRESTO, Japan Science and Technology Agency (JST), Tokyo 113-86

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• Depin MoS$_{\mathrm{2}}$ Fermi Level via One-Dimensional Contact

  ORAL

  March 16, 2017, 4:06 PM – March 16, 2017, 4:18 PM

  Authors

  • Zheng Yang

    • SAINT, Sungkyunkwan University

  • Chang Ho Ra

    • SAINT, Sungkyunkwan University

  • won jong yoo

    • SAINT, Sungkyunkwan University
    • Sungkyunkwan Univ
    • SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University(SKKU)

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• Large scale commercial fabrication of high quality graphene-based assays for biomolecule detection

  ORAL

  March 16, 2017, 4:18 PM – March 16, 2017, 4:30 PM

  Authors

  • Mitchell Lerner

    • Nanomedical Diagnostics

  • Yingning Gao

    • Nanomedical Diagnostics

  • Brett Goldsmith

    • Nanomedical Diagnostics

  • Francie Barron

    • Nanomedical Diagnostics

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• Electron optics lab-on-chip: Absorptive pinhole collimators for ballistic electrons in graphene

  ORAL

  March 16, 2017, 4:30 PM – March 16, 2017, 4:42 PM

  Authors

  • Arthur Barnard

    • Department of Physics, Stanford University, Stanford, California 94305, USA
    • Stanford Univ

  • Alex Hughes

    • Department of Physics, Stanford University, Stanford, California 94305, USA

  • Aaron Sharpe

    • Department of Applied Physics, Stanford University, Stanford, California 94305, USA
    • Stanford University

  • Kenji Watanabe

    • National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute of Material Science, Japan

  • Takashi Taniguchi

    • National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute of Material Science, Japan
    • NIMs
    • Advanced Materials Laboratory, National Institute for Materials Science, Japan

  • David Goldhaber-Gordon

    • Stanford University
    • Department of Physics, Stanford University, Stanford, California 94305, USA

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• A 2D Material based Gate Tunable Memristive Device for Emulating Modulatory Input-dependent Hetero-synaptic Plasticity.

  ORAL

  March 16, 2017, 4:42 PM – March 16, 2017, 4:54 PM

  Authors

  • Xiaodong Yan

    • Univ of Southern California

  • He Tian

    • Univ of Southern California

  • Yujun Xie

    • Yale University

  • Andrew Kostelec

    • NG Next, Northrop Grumman

  • Huan Zhao

    • Univ of Southern California

  • Judy J. Cha

    • Yale University

  • Jesse Tice

    • NG Next, Northrop Grumman

  • Han Wang

    • Univ of Southern California
    • University of Southern California

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• Electrical Transport of an Electron-Hole Double Layer with a Middle Barrier

  ORAL

  March 16, 2017, 4:54 PM – March 16, 2017, 5:06 PM

  Authors

  • Wu Xing-Jun

    • Peking University

  • Liu Ruiyuan

    • Peking University, Rice University

  • Lou Wenkai

    • SKLSM, Institute of Semiconductors, CAS

  • Chang Kai

    • SKLSM, Institute of Semiconductors, CAS

  • Sullivan Gerard

    • Teledyne Scientific and Imaging

  • Du Rui-Rui

    • Peking University, Rice University

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• Correlating Crystal Quality with Electronic Properties in Transition Metal Dichalcogenide Semiconductors

  ORAL

  March 16, 2017, 5:06 PM – March 16, 2017, 5:18 PM

  Authors

  • Drew Edelberg

    • Columbia University

  • Irene Zhang

    • Columbia University

  • Daniel Rhodes

    • Columbia University
    • Natl High Magnetic Field Lab, Tallahassee, FL, USA

  • Benjamin Foutty

    • Columbia University

  • Fernando Stavale

    • Centro Brasileiro de Pesquisas Físicas

  • Luis Balicas

    • NHMFL-FSU
    • NHMFL
    • National High Magnetic Field Lab
    • Natl High Magnetic Field Lab, Tallahassee, FL, USA

  • James Hone

    • Columbia University

  • Abhay Pasupathy

    • Columbia University
    • Department of Physics, Columbia University, New York, New York 10027, USA
    • Physics Department, Columbia University, New York, USA

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