Tunneling transport of mono- and few-layers magnetic van der Waals MnPS$_{\mathrm{3}}$

We have investigated the tunneling transport of mono- and few-layers of MnPS$_{\mathrm{3}}$ by using conductive atomic force microscopy. Due to the band alignment of indium tin oxide/MnPS$_{\mathrm{3}}$/Pt-Ir tip junction, the key features of both Schottky junction and Fowler-Nordheim tunneling (FNT) were observed for all the samples with varying thickness. Using the FNT model and assuming the effective electron mass (0.5 $m_{e})$ of MnPS$_{\mathrm{3}}$, we estimate the tunneling barrier height to be 1.31 eV and the dielectric breakdown strength as 5.41 MV/cm.