Transport in single InAs Nanowire and Bi2Se3 Flake Photosensitive Devices

POSTER

Abstract

We report on preliminary measurements of devices fabricated from single InAs nanowires and exfoliated Bi2Se3 flakes. The Wurtzite InAs nanowires were mechanically harvested from the MOCVD-grown substrates and dispersed onto a Si/SiO2 substrate. The Bi2Se3 flakes were exfoliated from Bi2Se3 single crystals which were grown in a Bridgeman furnace. The 60 to 100 nm thick flakes were dispersed onto a Si/SiO2 substrate. Using photolithography two electrical contacts were defined on either end of the nanowires or flakes by deposition of 20 nm Titanium followed by 300 nm Aluminum. Using a probe station and current amplifier, current-voltage measurements were obtained both in the dark and under white light illumination. Most devices showed I-V behavior consistent with back-to-back Schottky contacts, with some evident photosensitivity under illumination.

*We acknowledge the financial support of the NSF through grants DMR 1507844, DMR 1531373, DMR 1505549 and ECCS 1509706, and the financial support of the Australian Research Council.

Authors

  • Seyyedesadaf Pournia

    • Department of Physics, University of Cincinnati, Cincinnati, OH
  • Gabrielle Koknat

    • Department of Physics, University of Cincinnati, Cincinnati, OH
  • Giriraj Jnawali

    • Department of Physics, University of Cincinnati, Cincinnati, OH
    • Department of Physics, University of Cincinnati, Cincinati, OH
  • Howard Jackson

    • Department of Physics, University of Cincinnati, Cincinnati, OH
    • Department of Physics, University of Cincinnati, Cincinati, OH
  • Leigh Smith

    • Department of Physics, University of Cincinnati, Cincinnati, OH
    • Department of Physics, University of Cincinnati, Cincinati, OH
  • Hoe Tan

    • Department of Electronic and Materials Engineering, Australian National University, Canberra, Australia
  • Chennupati Jagadish

    • Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australia
    • Department of Electronic and Materials Engineering, Australian National University, Canberra, Australia
  • Stephen Wilson

    • Materials Department, University of California, Santa Barbara, CA
    • University of California - Santa Barbara