Electrical Properties of 2D Si$_{\mathrm{1-x}}$Ge$_{\mathrm{x}}$ alloys by ultra-fast thermal annealing
POSTER
Abstract
Ultra-fast thermal processing has been used to acquire 2D Si$_{\mathrm{1-x}}$Ge$_{\mathrm{x}}$ alloys of different x-values and effective thicknesses. X-ray reflectivity (XRR) data were analyzed with a three-layer model to obtain the thickness, roughness, mass density, and thus also the compositions. Comparison was then made with direct TEM imaging and SIMS depth profiling. The electrical properties according to the RT curves demonstrate semiconducting behaviors, as judged by their negative temperature coefficients, fit well with a functional of dual-energy Arrhenius relation representative of band conduction mechanisms. The extracted activation energies correspond to the mid-gap levels contributed by mutual alloying. The carrier concentrations, mobility and magnetoresistive behaviors will be discussed in relation to the material processing conditions for the 2D alloys.