Distinct Electronic Structure for the Extreme Magnetoresistance in YSb

ORAL

Abstract

An extreme magnetoresistance (XMR) has recently been observed in several non-magnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.

*US DOE, Office of Basic Energy Science

–

Authors

  • Junfeng He

    • Stanford University

  • Chaofan Zhang

    • Stanford University

  • Nirmal Ghimire

    • Argonne National Laboratory

  • Tian Liang

    • Stanford University

  • Chunjing Jia

    • Stanford University

  • Juan Jiang

    • ALS,ShanghaiTech University

  • Shujie Tang

    • Stanford University

  • Sudi Chen

    • Stanford University

  • Yu He

    • Stanford University

  • S.-K. Mo

    • ALS

  • C. C. Hwang

    • Pohang University of Science and Technology

  • M. Hashimoto

    • SLAC

  • D. H. Lu

    • SLAC

  • B. Moritz

    • Stanford University

  • T. P. Devereaux

    • Stanford University

  • Y. L. Chen

    • ShanghaiTech University, University of Oxford

  • J. F. Mitchell

    • Argonne National Laboratory

  • Z.-X. Shen

    • Stanford University