Spins and Defects in Si and SiC
FOCUS · S42 ·
Presentations
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Creating and Controlling Single Spins in Silicon Carbide
COFFEE_KLATCH · Invited
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Authors
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David Christle
- University of Chicago
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Spin-photon entanglement interfaces based on silicon carbide defects
ORAL
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Authors
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Sophia Economou
- Dept. of Physics, Virginia Tech
- Virginia Tech
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Pratibha Dev
- Dept. of Physics and Astronomy, Howard University
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Deterministic generation of all-photonic quantum repeaters
ORAL
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Authors
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Donovan Buterakos
- Dept. of Physics, Virginia Tech
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Edwin Barnes
- Dept. of Physics, Virginia Tech
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Sophia Economou
- Dept. of Physics, Virginia Tech
- Virginia Tech
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Spin and Optical Properties of the V1 Silicon Vacancy Defect in Silicon Carbide at Low Temperature
ORAL
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Authors
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Roland Nagy
- 3rd Institute of Physics, University of Stuttgart
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Matthias Widmann
- 3rd Institute of Physics, University of Stuttgart
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Matthias Niethammer
- 3rd Institute of Physics, University of Stuttgart
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Ilja Gerhardt
- 3rd Institute of Physics, University of Stuttgart
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Takeshi Oshima
- National Institutes for Quantum and Radiological Science and Technology
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Nguyen Tien Son
- Department of Physics, Chemistry and Biology, Linköping University
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Ivan G. Ivanov
- Department of Physics, Chemistry and Biology, Linköping University
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Sophia Economou
- Department of Physics, Virginia Tech, Blacksburg, Virginia
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Cristian Bonato
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University
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Sang Yun Lee
- Center for Quantum Information, Korea Institute of Science and Technology
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J\"org Wrachtrup
- 3rd Institute of Physics, University of Stuttgart
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Resonant optical spectroscopy and coherent control of Cr$^{\mathrm{4+}}$ spin ensembles in SiC and GaN
COFFEE_KLATCH · Invited
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Authors
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William Koehl
- Institute for Molecular Engineering, Univ. of Chicago, Chicago, IL 60637; Materials Science Division, Argonne National Laboratory, Argonne, IL 60439.
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Electrical Excitation of Silicon Vacancies in 4H SiC
ORAL
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Authors
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Jordan Stroman
- Howard University
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Evelyn Hu
- Harvard University
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Gary Harris
- Howard University
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Charge state control of divacancy spin defects in 4H-SiC
ORAL
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Authors
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Gary Wolfowicz
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
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Andrew L. Yeats
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
- Univ of Chicago
- Institute for Molecular Engineering, University of Chicago
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David D. Awschalom
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
- Institute for Molecular Engineering, University of Chicago
- University of Chicago
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Studying the surface diffusion of Al on H:Si(100) for STM lithography
ORAL
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Authors
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Hyun-Soo Kim
- Univ of Maryland-College Park
- National Institute of Standards and Technology
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Aruna Ramanayaka
- National Institute of Standards and Technology
- Joint Quantum Institute, National Institute of Standards and Technology
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Ke Tang
- Univ of Maryland-College Park
- National Institute of Standards and Technology
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Joshua Pomeroy
- National Institute of Standards and Technology
- NIST
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Development of Atomically Precise Low Dimensional Wires and Tunnel Junctions for Quantum Information and Metrology
ORAL
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Authors
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Michael Stewart
- National Institute of Standards and Technology
- National Institute of Standards and Technology, Gaithersburg, MD, 20899 USA
- NIST - Natl Inst of Stds & Tech
- NIST
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J. M. Pomeroy
- National Institute of Standards and Technology, Gaithersburg, MD, 20899 USA
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Curt A. Richter
- National Institute of Standards and Technology, Gaithersburg, MD, 20899 USA
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Richard M. Silver
- National Institute of Standards and Technology, Gaithersburg, MD, 20899 USA
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Neil M. Zimmerman
- National Institute of Standards and Technology, Gaithersburg, MD, 20899 USA
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K. J. Dwyer
- National Institute of Standards and Technology, Gaithersburg, MD, 20899 USA
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Joseph A. Hagmann
- National Institute of Standards and Technology, Gaithersburg, MD, 20899 USA
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Binhui Hu
- National Institute of Standards and Technology, Gaithersburg, MD, 20899 USA
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Hyun-soo Kim
- National Institute of Standards and Technology, Gaithersburg, MD, 20899 USA
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Roy Murray
- National Institute of Standards and Technology, Gaithersburg, MD, 20899 USA
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Pradeep Namboodiri
- National Institute of Standards and Technology, Gaithersburg, MD, 20899 USA
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A. N. Ramanayaka
- National Institute of Standards and Technology, Gaithersburg, MD, 20899 USA
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Ryan Stein
- National Institute of Standards and Technology, Gaithersburg, MD, 20899 USA
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Ke Tang
- National Institute of Standards and Technology, Gaithersburg, MD, 20899 USA
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Xiqiao Wang
- National Institute of Standards and Technology, Gaithersburg, MD, 20899 USA
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Johnathon Wyrick
- National Institute of Standards and Technology, Gaithersburg, MD, 20899 USA
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Optimizing silicon locking layer overgrowth for high-quality phosphorus-doped delta layers
ORAL
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Authors
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Xiqiao Wang
- Univ of Maryland-College Park
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Joseph Hagmann
- National Institute of Standards and Technology
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Pradeep Namboodiri
- National Institute of Standards and Technology
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Jonathan Wyrick
- National Institute of Standards and Technology
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Kai Li
- National Institute of Standards and Technology
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Roy Murray
- National Institute of Standards and Technology
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M.D. Stewart, Jr
- National Institute of Standards and Technology
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Curt Richter
- National Institute of Standards and Technology
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Richard Silver
- National Institute of Standards and Technology
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Quantum metrology with a single spin-3/2 defect in silicon carbide
ORAL
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Authors
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Oney O. Soykal
- Naval Research Laboratory
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Thomas L. Reinecke
- Naval Research Laboratory
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Electron Paramagnetic Resonance Spectroscopy of Hyperfine Structure of Er:YSO using Josephson Bifurcation Amplifier
ORAL
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Authors
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Rangga P Budoyo
- NTT Basic Research Laboratories
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Kosuke Kakuyanagi
- NTT Basic Research Laboratories
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Hiraku Toida
- NTT Basic Research Laboratories
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Yuichiro Matsuzaki
- NTT Basic Research Laboratories
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William J Munro
- NTT Basic Research Laboratories
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Hiroshi Yamaguchi
- NTT Basic Research Laboratories
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Shiro Saito
- NTT Basic Research Laboratories
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