Designing antiphase domain boundary by atomic controlled heterointerfaces
ORAL
Abstract
Domain boundaries are one of the most commonly observed phenomena in crystal and thin film growth. They often show random formation by nature but can have large impact on physical properties. So far, there are very limited examples to exhibit designable domain boundary arrangement. In this work, we employed a methodology to control the nucleation and growth of antiphase boundary (APB), by growing thin film oxides on top of freshly cleaved layered compound. At the cleaved surface, the step of two adjunct terraces serves a natural seeding bed to nucleate APB. Utilizing high resolution scanning transmission electron microscopy (STEM), we directly visualized that APBs can merge into pyramid-like shape when two steps are close. Our observation opens up a new route to design and control domain boundaries in thin film transition metal oxides.
*Supported by U.S. DOE under Grant No. DOE DE-SC0002136.
–