Determination of the gap of bulk Bi$_{2}$Se$_{3}$ at low temperatures by photo-luminescence and optical transmission measurements.

ORAL

Abstract

A series of different Bi$_{2}$Se$_{3}$ samples have been investigated at low temperatures by transport, photo-luminescence and optical transmission measurements. A complete analysis of the dielectric function of the material allows to extract the value of the gap Eg which is found to be equal to 0.219 $+$/- 0.001 eV at temperatures below 4.2 K.

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Authors

  • Gerard Martinez

    • LNCMI-CNRS, 25 rue des martyrs, Grenoble, France

  • B Piot

    • LNCMI-CNRS, 25 rue des martyrs, Grenoble, France

  • M Hakl

    • LNCMI-CNRS, 25 rue des martyrs, Grenoble, France

  • M Orlita

    • LNCMI-CNRS, 25 rue des martyrs, Grenoble, France

  • M Potemski

    • LNCMI-CNRS, 25 rue des martyrs, Grenoble, France

  • Y.S. Hor

    • Department of physics, Missouri University of Science and Technology, MO 65409 USA

  • A Materna

    • Institute of Electronic Materiazls Technology, Warsaw , Poland

  • G Strzelecka

    • Institute of Electronic Materiazls Technology, Warsaw , Poland

  • A Hruban

    • Institute of Electronic Materiazls Technology, Warsaw , Poland