Complete cancellation of Duffing nonlinearity in atomically thin MoS$_{\mathrm{2}}$ Nanoelectromechanical Systems

Ultralow mass and extraordinary mechanical properties of atomically thin membrane make it an attractive alternative to conventional Nanoelctromechanical systems (NEMS) for various applications. As dimensions of these NEMS devices shrink down to atomically thin membrane, nonlinear effects dominate the linear response. Ability to control and manipulate these nonlinearities would thus be crucial for next generation of NEMS devices. Here, we present an electrostatic mechanism to completely cancel out the Duffing nonlinearity in atomically thin MoS$_{\mathrm{2}}$-NEMS at room temperature. We observe a clear crossover from hardening to softening behavior with increasing DC gate voltage. As a direct consequence we observe about 30dB improvement in dynamic range of the devices. We also present the effect of inbuilt strain of the device on the cancellation of nonlinearity.